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Product Datasheet
January 17, 2005
27- 32 GHz 0.7 Watt Power Amplifier
TGA1073B-SCC
Key Features and Performance
* * * * * * 0.25 um pHEMT Technology 25 dB Nominal Gain @ 28 GHz 28.5 dBm Nominal Pout @ P1dB (7V) -38 dBc IMR3 @ 18 dBm SCL Bias 6 - 8 V @ 420 mA Chip Dimensions 3.12mm x 2.15mm
Primary Applications
* *
The TriQuint TGA1073B-SCC is a three stage HPA MMIC design using TriQuint's proven 0.25 um Power pHEMT process. The TGA1073B is designed to support a variety of millimeter wave applications including point-to-point digital radio and LMDS/LMCS and Ka band satellite ground terminals. The three stage design consists of a 2 x 300um input stage driving a 2 x 600um interstage followed by a 4 x 600um output stage. The TGA1073B provides 28.5 dBm nominal output power at 1dB compression across 27-32GHz. Typical small signal gain is 25 dB at 28GHz and 18dB at 32GHz. The TGA1073B requires minimum off-chip components. Each device is 100% DC and RF tested on-wafer to ensure performance compliance. The device is available in chip form.
Point-to-Point Radio Point-to-Multipoint Communications
30 25 20 15 10 5 0 -5 -10 -15 -20 -25 25 26 27 28 29 30 31 32 33 34 35 Frequency (GHz) S11 S22 S21
30.0 29.5 29.0 28.5 28.0 27.5 27.0 26.5 26.0 28.0 29.0 30.0 Frequency (GHz) 31.0 32.0 VD = +6V, +7V, +8V IDQ = 420mA
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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Product Datasheet
TGA1073B-SCC
MAXIMUM RATINGS SYMBOL V I I
+ + -
PARAMETER 4/ POSITIVE SUPPLY VOLTAGE POSITIVE SUPPLY CURRENT NEGATIVE GATE CURRENT INPUT CONTINUOUS WAVE POWER POWER DISSIPATION OPERATING CHANNEL TEMPERATURE MOUNTING TEMPERATURE (30 SECONDS) STORAGE TEMPERATURE
VALUE 11V 630 mA 35.2 mA 23 dBm 6.93 W 150 0C 320 C -65 to 150 0C
0
NOTES 1/
PIN PD TCH TM TSTG 1/ 2/ 3/ 4/
2/ 3/
Total current for all stages. These ratings apply to each individual FET. Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. These ratings represent the maximum operable values for the device.
DC SPECIFICATIONS (100%) (TA = 25 C + 5 C) NOTES SYMBOL IDSS1,2 GM1,2 1/ 1/ 1/ 1/ 1/ 1/ 1/ 1/ 2/ |VP1,2| |VP3| |VP4| |VP5,6| |VP7,8| |VBVGD1-8| |VBVGS1,2| TEST CONDITIONS 2/ MIN STD STD STD STD STD STD STD STD STD 60 132 0.5 0.5 0.5 0.5 0.5 11 11 LIMITS MAX 282 318 1.5 1.5 1.5 1.5 1.5 30 30 mA mS V V V V V V V UNITS
VP, VBVGD, and VBVGS are negative. The measurement conditions are subject to change at the manufacture's discretion (with appropriate notification to the buyer).
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TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Product Datasheet
TGA1073B-SCC
RF SPECIFICATIONS (TA = 25C + 5C) NOTE TEST MEASUREMENT CONDITIONS 6V @ 420mA 27 - 30 GHz 31 - 32 GHz 27 - 32 GHz VALUE MIN 20 16 26.5 TYP 25 20 28.5 MAX dB dB dBm UNITS
1/
SMALL-SIGNAL GAIN MAGNITUDE POWER OUTPUT AT 1 dB GAIN COMPRESSION
1/ 1/ 2/
INPUT RETURN LOSS MAGNITUDE OUTPUT RETURN LOSS MAGNITUDE OUTPUT THIRD ORDER INTERCEPT
27 - 32 GHz 27 - 32 GHz
-10 -10 37
dB dB dBm
1/
RF probe data is taken at 1 GHz steps.
2/
Minimum output third-order-intercept (OTOI) is generally 6dB minimum above the 1dB compression point (P1dB). Calculations are based on standard two-tone testing with each tone approximately 10dB below the nominal P1dB. Factors that may affect OTOI performance include device bias, measurement frequency, operating temperature, output interface and output power level for each tone.
RELIABILITY DATA PARAMETER BIAS CONDITIONS VD (V) ID (mA) 6 420 PDISS (W) 2.52 RJC (C/W) 22.58 TCH (C) 126.9 TM (HRS) 8.0 E6
RJC Thermal resistance (channel to backside of c/p)
Note: Assumes eutectic attach using 1.5 mil thick 80/20 AuSn mounted to a 20mil CuMo Carrier at 70C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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Product Datasheet
TGA1073B Average Performance
Sam ple Size = 11499 devices
34 30 26 Gain (dB) 22 18 14 10 6 2 26 27 28 29 30 Frequency (GHz) 31 32 33 34
0 -4 Input Return Loss (dB) -8 -12 -16 -20 -24 -28 -32 -36 -40 26 27 28 29 30 Frequency (GHz) 31 32 33 34
0 -4 -8 Output Return Loss (dB) -1 2 -1 6 -2 0 -2 4 -2 8 -3 2 -3 6 -4 0 F r e q u e n c y (G H z )
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
4
Product Datasheet
TGA1073B-SCC
Mechanical Characteristics
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
5
Product Datasheet
TGA1073B-SCC
Chip Assembly and Bonding Diagram Vg
0.01uF
100pF
Vd
0.01uF
100pF
RF in
RF out
Recommended: Solder MMIC to carrier using AuSn 80/20 Bond MMIC RF in and RF out with 5mil Au ribbon Ribbon should be as short as possible Bond DC Lines as shown with 1 mil bondwires
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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Product Datasheet
TGA1073B-SCC
Reflow process assembly notes: * * * * * AuSn (80/20) solder with limited exposure to temperatures at or above 300 C alloy station or conveyor furnace with reducing atmosphere no fluxes should be utilized coefficient of thermal expansion matching is critical for long-term reliability storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes: * * * * * * * vacuum pencils and/or vacuum collets preferred method of pick up avoidance of air bridges during placement force impact critical during auto placement organic attachment can be used in low-power applications curing should be done in a convection oven; proper exhaust is a safety concern microwave or radiant curing should not be used because of differential heating coefficient of thermal expansion matching is critical
Interconnect process assembly notes: * * * * * thermosonic ball bonding is the preferred interconnect technique force, time, and ultrasonics are critical parameters aluminum wire should not be used discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire maximum stage temperature: 200 C
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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